4DS Memory (ASX:4DS) is advancing the development of its Interface Switching resistive random access memory (IS ReRAM) cells.
The company is in the process of collecting metrics on four key characteristics: small memory cell geometries, cycling endurance, data retention and access speed.
4DS has completed analysis of cycling endurance and data retention, and is initiating access speed testing.
In order to validate and demonstrate commercial viability of a particular storage technology, all memory developers follow a very specific development process.
During this multi-step process, memory cells are scaled down, then tested for cycling endurance, data retention and access speed – essential characteristics for a functional memory technology.
The company’s IS ReRAM technology has now demonstrated that it is making significant advances in all areas.
The company is targeting a US$40 billion global market.
Further technical updates regarding the access speed testing are expected.
